دیتاشیت STD2HNK60Z-1
مشخصات دیتاشیت
| نام دیتاشیت |
STx2HNK60Z(x)
|
| حجم فایل |
847.768
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
29
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STD2HNK60Z-1
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
45W
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Total Gate Charge (Qg@Vgs):
15nC@10V
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Drain Source Voltage (Vdss):
600V
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Input Capacitance (Ciss@Vds):
280pF@25V
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Continuous Drain Current (Id):
2A
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Gate Threshold Voltage (Vgs(th)@Id):
4.5V@50uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
4.8Ω@10V,1A
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Package:
TO-251
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Manufacturer:
STMicroelectronics
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Series:
SuperMESH™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 50µA
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Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
45W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Base Part Number:
STD2HNK
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detail:
N-Channel 600V 2A (Tc) 45W (Tc) Through Hole I-PAK
